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Journal Articles

Study of charge collection mechanism using multi line Schottky barrier diode

Mori, Hidenobu; Hirao, Toshio; Laird, J. S.; Onoda, Shinobu; Ito, Hisayoshi

JAERI-Review 2002-035, TIARA Annual Report 2001, p.14 - 16, 2002/11

no abstracts in English

Journal Articles

Measurement of single event transient current using collimated heavy ion micro beam

Onoda, Shinobu; Hirao, Toshio; Laird, J. S.; Mori, Hidenobu; Abe, Hiroshi; Ito, Hisayoshi

JAERI-Review 2002-035, TIARA Annual Report 2001, p.3 - 4, 2002/11

no abstracts in English

Journal Articles

Analysis of failure caused by cosmic rays in high-voltage high-power semiconductor devices, 2

Matsuda, Hideo*; Omura, Ichiro*; Sakiyama, Yoko*; Urano, Satoshi*; Iesaka, Susumu*; Ohashi, Hiromichi*; Hirao, Toshio; Abe, Hiroshi; Ito, Hisayoshi; Mori, Hidenobu; et al.

JAERI-Review 2002-035, TIARA Annual Report 2001, p.11 - 13, 2002/11

no abstracts in English

Journal Articles

Modification of C$$_{60}$$ thin films by ion 7-MeV $$^{12}$$C$$^{2+}$$ ion irradiation

Narumi, Kazumasa; Xu, Y.; Miyashita, Kiyoshi*; Naramoto, Hiroshi

JAERI-Review 2002-035, TIARA Annual Report 2001, p.176 - 178, 2002/11

no abstracts in English

Journal Articles

Electron emission from solids by fast cluster impact

Kudo, Hiroshi*; Iwasaki, Wataru*; Suguri, Takuya*; Saito, Yuichi; Yamamoto, Shunya; Narumi, Kazumasa; Naramoto, Hiroshi

JAERI-Review 2002-035, TIARA Annual Report 2001, p.214 - 216, 2002/11

no abstracts in English

Journal Articles

Dosimetry for 3-45 MeV/u ion beams using thin film dosimeters

Kojima, Takuji; Sunaga, Hiromi; Takizawa, Haruki; Hanaya, Hiroaki; Tachibana, Hiroyuki*

JAERI-Review 2002-035, TIARA Annual Report 2001, p.123 - 124, 2002/11

Thin film dosimeters of about 10-200 mm in thickness, which were well -characterized for $$^{60}$$Co $$gamma$$-rays or 2-MeV electrons, have been applied to dosimetry for ion beams. For development of dosimetry covering the dose range of 0.005 to 200 kGy with high precision within $$pm$$5%, the linear energy transfer (LET) characteristics of thin films were studied involving development of precise fluence measurement. Dose mapping technique was also developed achieving high spatial resolution values of about 1$$mu$$m and $$<$$10$$mu$$m for lateral and depth directions respectively. The outline of the recent development is summarized in this paper.

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